PNY Electronics PNY 2GB vs Hyundai Inc AR32C16S8K2HU416R 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Hyundai Inc AR32C16S8K2HU416R 8GB

Hyundai Inc AR32C16S8K2HU416R 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

Hyundai Inc AR32C16S8K2HU416R 8GB

需要考虑的原因
Hyundai Inc AR32C16S8K2HU416R 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 27

左右 -35% 更低的延时
更快的读取速度，GB/s

19 13.8

测试中的平均数值
更快的写入速度，GB/s

15.1 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Hyundai Inc AR32C16S8K2HU416R 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 20
读取速度，GB/s

13.8 19.0
写入速度，GB/s

8.4 15.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2274 3410

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 99U5428-018.A00LF 8GB

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Micron Technology 9ASF51272PZ-2G3B1 4GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

Crucial Technology CT51264AC800.C16FC 4GB

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Patriot Memory (PDP Systems) PSD48G24002 8GB

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Samsung M393B1K70CH0-CH9 8GB

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Kingston KHX2400C14/16G 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Wilk Elektronik S.A. GY2400D464L15S/8G 8GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Hyundai Inc AR32C16S8K2HU416R 8GB

Hyundai Inc AR32C16S8K2HU416R 8GB

Samsung M3 93T5750CZA-CE6 2GB

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G Skill Intl F4-3200C22-8GRS 8GB

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Kingston 9905403-444.A00LF 4GB

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Apacer Technology 78.B1GM3.C7W0B 4GB

Apacer Technology 78.B1GM3.C7W0B 4GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

G Skill Intl F4-2133C15-4GRS 4GB

G Skill Intl F4-2133C15-4GRS 4GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Micron Technology CT8G4DFD8213.16FA2 8GB

Micron Technology CT8G4DFD8213.16FA2 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology 18ASF1G72PDZ-2G3B1 8GB

Micron Technology 18ASF1G72PDZ-2G3B1 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Essencore Limited KD4AGS88C-32N220D 16GB

Essencore Limited KD4AGS88C-32N220D 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-3200C14-8GTZ 8GB

G Skill Intl F4-3200C14-8GTZ 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

G Skill Intl F4-4266C19-8GTZR 8GB

G Skill Intl F4-4266C19-8GTZR 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Samsung M378A2K43CB1-CTD 16GB

Samsung M378A2K43CB1-CTD 16GB