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PNY Electronics PNY 2GB
Kingston KF3600C16D4/16GX 16GB

PNY Electronics PNY 2GB vs Kingston KF3600C16D4/16GX 16GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Kingston KF3600C16D4/16GX 16GB

Kingston KF3600C16D4/16GX 16GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
Kingston KF3600C16D4/16GX 16GB 需要考虑的原因
Kingston KF3600C16D4/16GX 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 27
    左右 -8% 更低的延时
  • 更快的读取速度，GB/s
    19.3 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.9 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Kingston KF3600C16D4/16GX 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 25
  • 读取速度，GB/s
    13.8 left arrow 19.3
  • 写入速度，GB/s
    8.4 left arrow 15.9
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 3751

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Kingston KF3600C16D4/16GX 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SF4642G8CK8IEHLSBG 16GB
Smart Modular SF4642G8CK8IEHLSBG 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMK8GX4M2B3600C18 4GB
Corsair CMK8GX4M2B3600C18 4GB
内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3866C18-16GTZR 16GB
G Skill Intl F4-3866C18-16GTZR 16GB
内存RAM
Corsair CM5S16GM4800A40K2 16GB
Corsair CM5S16GM4800A40K2 16GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston KF3600C16D4/16GX 16GB
Kingston KF3600C16D4/16GX 16GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Kingston HP26D4U9D8ME-16X 16GB
Kingston HP26D4U9D8ME-16X 16GB
内存RAM
Corsair CM2X1024-6400 1GB
Corsair CM2X1024-6400 1GB
Avant Technology W6451U66J7240ND 4GB
Avant Technology W6451U66J7240ND 4GB
内存RAM
Team Group Inc. Team-Value-800 2GB
Team Group Inc. Team-Value-800 2GB
Crucial Technology CT4G4DFS824A.C8FBR2 4GB
Crucial Technology CT4G4DFS824A.C8FBR2 4GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-4000C16-8GTZR 8GB
G Skill Intl F4-4000C16-8GTZR 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3200C14-8GVR 8GB
G Skill Intl F4-3200C14-8GVR 8GB
内存RAM