PNY Electronics PNY 2GB vs Kingston KHX2133C13S4/4G 4GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Kingston KHX2133C13S4/4G 4GB

Kingston KHX2133C13S4/4G 4GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

Kingston KHX2133C13S4/4G 4GB

需要考虑的原因
Kingston KHX2133C13S4/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 -8% 更低的延时
更快的读取速度，GB/s

14.8 13.8

测试中的平均数值
更快的写入速度，GB/s

11.2 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Kingston KHX2133C13S4/4G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 25
读取速度，GB/s

13.8 14.8
写入速度，GB/s

8.4 11.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 2346

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX2666C16D4/32GX 32GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

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Micron Technology 8ATF1G64AZ-2G6D1 8GB

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Crucial Technology BLS16G4D26BFSB.16FBR 16GB

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G Skill Intl F3-14900CL9-4GBZL 4GB

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Kingston K531R8-MIN 4GB

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Corsair CMW32GX4M4Z3200C16 8GB

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Apacer Technology GD2.2229BH.001 16GB

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Kingston ACR256X64D3S1333C9 2GB

Apacer Technology GD2.0918CT.001 4GB

Apacer Technology GD2.0918CT.001 4GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

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InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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A-DATA Technology AO2P26KC8T1-BPYS 8GB

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SK Hynix HMA451U6AFR8N-TF 4GB

Kingston ASU21D4U5S8MB-8 8GB

Kingston ASU21D4U5S8MB-8 8GB