PNY Electronics PNY 2GB vs Mushkin 99[2/7/4]205[F/T] 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Mushkin 99[2/7/4]205[F/T] 8GB

Mushkin 99[2/7/4]205[F/T] 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

Mushkin 99[2/7/4]205[F/T] 8GB

需要考虑的原因
Mushkin 99[2/7/4]205[F/T] 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 27

左右 -42% 更低的延时
更快的读取速度，GB/s

19.3 13.8

测试中的平均数值
更快的写入速度，GB/s

13.8 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Mushkin 99[2/7/4]205[F/T] 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 19
读取速度，GB/s

13.8 19.3
写入速度，GB/s

8.4 13.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 3169

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung 18ASF1G72PDZ-2G1B1 16GB

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Corsair CMV4GX3M1C1600C11 4GB

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Apacer Technology 78.BAGP4.AR50C 4GB

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Samsung M378B5673FH0-CH9 2GB

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Apacer Technology 78.CAGNT.4050B 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Crucial Technology CT16G4SFD824A.M16FA 16GB

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SK Hynix HMT151R7TFR4C-H9 4GB

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Corsair CMWX8GD3200C16W2E 8GB