PNY Electronics PNY 2GB vs Samsung T471A1K43CB1-CRC 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Samsung T471A1K43CB1-CRC 8GB

Samsung T471A1K43CB1-CRC 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

更快的写入速度，GB/s

8.4 6.5

测试中的平均数值

Samsung T471A1K43CB1-CRC 8GB

需要考虑的原因
Samsung T471A1K43CB1-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 27

左右 -13% 更低的延时
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Samsung T471A1K43CB1-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 24
读取速度，GB/s

13.8 13.8
写入速度，GB/s

8.4 6.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2274 1983

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4000C14-16GTZR 16GB

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Crucial Technology CT25664BA160B.C16F 2GB

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Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HMA41GU6MFR8N-TF 8GB

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Kllisre KRE-D3U1600M/8G 8GB

Kllisre KRE-D3U1600M/8G 8GB

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Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Corsair CMG32GX4M2D3600C18 16GB

Corsair CMG32GX4M2D3600C18 16GB