PNY Electronics PNY 2GB vs SK Hynix HMA41GU7AFR8N-TF 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

SK Hynix HMA41GU7AFR8N-TF 8GB

SK Hynix HMA41GU7AFR8N-TF 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 18% 更低的延时

SK Hynix HMA41GU7AFR8N-TF 8GB

需要考虑的原因
SK Hynix HMA41GU7AFR8N-TF 8GB

报告一个错误

更快的读取速度，GB/s

14.4 13.8

测试中的平均数值
更快的写入速度，GB/s

11.3 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

SK Hynix HMA41GU7AFR8N-TF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 33
读取速度，GB/s

13.8 14.4
写入速度，GB/s

8.4 11.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 2693

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS16G4D30AESE.M16FE 16GB

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Apacer Technology AQD-D4U8GN24-SE 8GB

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G Skill Intl F4-4000C18-16GTZN 16GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

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Mushkin 991988 (996988) 4GB

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Corsair CMK128GX4M8A2400C14 16GB

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Corsair CM2X1024-8500C5D 1GB

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Crucial Technology CT16G4SFD8213.C16FDD 16GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

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Kingston 99U5584-005.A00LF 4GB

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Nanya Technology M471A5143EB1-CRC 4GB

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Kingston 9905403-444.A00LF 4GB

G Skill Intl F4-4000C18-32GTRS 32GB

G Skill Intl F4-4000C18-32GTRS 32GB

Kingston 9905403-437.A01LF 4GB

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Crucial Technology CT4G4DFS8213.C8FHP 4GB

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SpecTek Incorporated PSD34G13332 4GB

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G Skill Intl F4-3200C14-8GTZSK 8GB

Samsung M393B1G70BH0-CK0 8GB

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V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB

V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB