PNY Electronics PNY 2GB vs SK Hynix HMA82GS6DJR8N-WM 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

SK Hynix HMA82GS6DJR8N-WM 16GB

SK Hynix HMA82GS6DJR8N-WM 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 43

左右 37% 更低的延时

SK Hynix HMA82GS6DJR8N-WM 16GB

需要考虑的原因
SK Hynix HMA82GS6DJR8N-WM 16GB

报告一个错误

更快的读取速度，GB/s

15 13.8

测试中的平均数值
更快的写入速度，GB/s

13.0 8.4

测试中的平均数值
更高的内存带宽，mbps

23400 10600

左右 2.21 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

SK Hynix HMA82GS6DJR8N-WM 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 43
读取速度，GB/s

13.8 15.0
写入速度，GB/s

8.4 13.0
内存带宽，mbps

10600 23400

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

2274 2794

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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PNY Electronics PNY 2GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Samsung M386B4G70DM0-CMA4 32GB

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Corsair CMD128GX4M8A2666C15 16GB

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Crucial Technology CT16G4SFD8213.C16FBD 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Corsair CMK16GX4M4B3200C15 4GB

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takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Corsair CMW64GX4M4D3600C18 16GB

Corsair CMW64GX4M4D3600C18 16GB

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

Corsair CMK16GX4M2K3600C19 8GB

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Samsung M471B5173QH0-YK0 4GB

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G Skill Intl F4-3600C14-8GTZRA 8GB

G Skill Intl F4-3600C14-8GTZRA 8GB

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

G Skill Intl F4-3466C16-8GVK 8GB

G Skill Intl F4-3466C16-8GVK 8GB