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PUSKILL DDR3 1600 8G 8GB
Gloway International (HK) STK2400C15-16GB 16GB

PUSKILL DDR3 1600 8G 8GB vs Gloway International (HK) STK2400C15-16GB 16GB

总分
star star star star star
PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分
star star star star star
Gloway International (HK) STK2400C15-16GB 16GB

Gloway International (HK) STK2400C15-16GB 16GB

差异 规格 评论

差异

PUSKILL DDR3 1600 8G 8GB 需要考虑的原因
PUSKILL DDR3 1600 8G 8GB
报告一个错误
Gloway International (HK) STK2400C15-16GB 16GB 需要考虑的原因
Gloway International (HK) STK2400C15-16GB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 38
    左右 -65% 更低的延时
  • 更快的读取速度，GB/s
    17 left arrow 16.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 10.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
PUSKILL DDR3 1600 8G 8GB
Gloway International (HK) STK2400C15-16GB 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 23
  • 读取速度，GB/s
    16.7 left arrow 17.0
  • 写入速度，GB/s
    10.0 left arrow 12.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2753 left arrow 3098

PUSKILL DDR3 1600 8G 8GB RAM的比较

A-DATA Technology DDR3 1866 8GB
Crucial Technology CT16G4DFD8266.M16FE 16GB

Gloway International (HK) STK2400C15-16GB 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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G Skill Intl F2-8500CL5-2GBPI 2GB
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Netac Technology Co Ltd E40832A 8GB
内存RAM
Corsair CMD16GX3M2A1600C7 8GB
Corsair CMD16GX3M2A1600C7 8GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Gloway International (HK) STK2400C15-16GB 16GB
Gloway International (HK) STK2400C15-16GB 16GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-4000C16-16GTZR 16GB
G Skill Intl F4-4000C16-16GTZR 16GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
A-DATA Technology AO1P32NC8T1-BCIS 8GB
A-DATA Technology AO1P32NC8T1-BCIS 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3600C16-16GTRS 16GB
G Skill Intl F4-3600C16-16GTRS 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Apacer Technology 78.C1GMS.C7Z0C 8GB
Apacer Technology 78.C1GMS.C7Z0C 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-3600C19-8GSXKB 8GB
G Skill Intl F4-3600C19-8GSXKB 8GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Crucial Technology BLS4G4S240FSD.8FBD 4GB
Crucial Technology BLS4G4S240FSD.8FBD 4GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Kingston XJ69DF-MIE 8GB
Kingston XJ69DF-MIE 8GB
内存RAM