PUSKILL DDR3 1600 8G 8GB vs Golden Empire CL18-20-20 D4-3600 8GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Golden Empire CL18-20-20 D4-3600 8GB

Golden Empire CL18-20-20 D4-3600 8GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

Golden Empire CL18-20-20 D4-3600 8GB

需要考虑的原因
Golden Empire CL18-20-20 D4-3600 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 38

左右 -36% 更低的延时
更快的读取速度，GB/s

17.7 16.7

测试中的平均数值
更快的写入速度，GB/s

15.8 10.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Golden Empire CL18-20-20 D4-3600 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 28
读取速度，GB/s

16.7 17.7
写入速度，GB/s

10.0 15.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2753 3772

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Corsair CMD64GX4M8A2400C14 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Samsung M378A1K43EB2-CWE 8GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Crucial Technology CT16G4SFS8266.C8FB 16GB

Crucial Technology CT16G4SFS8266.C8FB 16GB

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Samsung M393B1G70BH0-YK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N