PUSKILL DDR3 1600 8G 8GB vs Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 52

左右 27% 更低的延时
更快的读取速度，GB/s

16.7 10

测试中的平均数值
更快的写入速度，GB/s

10.0 7.6

测试中的平均数值

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

需要考虑的原因
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 52
读取速度，GB/s

16.7 10.0
写入速度，GB/s

10.0 7.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2753 2169

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905664-010.A00G 4GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

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G Skill Intl F4-3600C15-8GTZ 8GB

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Kingston ACR16D3LS1KNG/4G 4GB

Kingston KHX2666C13/8GX 8GB

Kingston KHX2666C13/8GX 8GB