PUSKILL DDR3 1600 8G 8GB vs Hyundai Inc AR32C16S8K2SU416R 8GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Hyundai Inc AR32C16S8K2SU416R 8GB

Hyundai Inc AR32C16S8K2SU416R 8GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

Hyundai Inc AR32C16S8K2SU416R 8GB

需要考虑的原因
Hyundai Inc AR32C16S8K2SU416R 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 38

左右 -90% 更低的延时
更快的读取速度，GB/s

19.4 16.7

测试中的平均数值
更快的写入速度，GB/s

15.0 10.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Hyundai Inc AR32C16S8K2SU416R 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 20
读取速度，GB/s

16.7 19.4
写入速度，GB/s

10.0 15.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2753 3395

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Corsair CMV4GX3M1B1600C11 4GB

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Kingston 99U5474-038.A00LF 4GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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Corsair CMW32GX4M2D3600C18 16GB

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AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Kingston 9905700-011.A00G 8GB

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A-DATA Technology DQVE1B16 2GB

Crucial Technology CT32G4SFD832A.M16FB 32GB

Crucial Technology CT32G4SFD832A.M16FB 32GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Kingston ACR26D4U9D8ME-16 16GB