PUSKILL DDR3 1600 8G 8GB vs Micron Technology M471A1K43BB1-CRC 8GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Micron Technology M471A1K43BB1-CRC 8GB

Micron Technology M471A1K43BB1-CRC 8GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

更快的读取速度，GB/s

16.7 16

测试中的平均数值

Micron Technology M471A1K43BB1-CRC 8GB

需要考虑的原因
Micron Technology M471A1K43BB1-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 38

左右 -31% 更低的延时
更快的写入速度，GB/s

12.1 10.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Micron Technology M471A1K43BB1-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 29
读取速度，GB/s

16.7 16.0
写入速度，GB/s

10.0 12.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2753 2635

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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A-DATA Technology DDR2 800G 2GB

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Samsung DDR3 8GB 1600MHz 8GB

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Team Group Inc. DDR4 3600 8GB

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Samsung M378A5244CB0-CTD 4GB

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A-DATA Technology DDR4 3200 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Crucial Technology CT16G4DFD8266.M16FR 16GB

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Crucial Technology CT16G4SFD8213.C16FDD 16GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

Kingston KDK8NX-MIE 16GB

Kingston KDK8NX-MIE 16GB

Kingston KHX1866C10D3/8GX 8GB

Kingston KHX1866C10D3/8GX 8GB

Crucial Technology CT8G4SFS832A.C8FP 8GB

Crucial Technology CT8G4SFS832A.C8FP 8GB

Samsung 1600 CL10 Series 8GB

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Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

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Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

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