PUSKILL DDR3 1600 8G 8GB vs Samsung M471A1K43DB1-CWE 8GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

更快的读取速度，GB/s

16.7 16.1

测试中的平均数值

Samsung M471A1K43DB1-CWE 8GB

需要考虑的原因
Samsung M471A1K43DB1-CWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 38

左右 -15% 更低的延时
更快的写入速度，GB/s

13.0 10.0

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Samsung M471A1K43DB1-CWE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 33
读取速度，GB/s

16.7 16.1
写入速度，GB/s

10.0 13.0
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2753 2987

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Crucial Technology CT8G4SFS832A.M8FRS 8GB

Crucial Technology CT8G4SFS832A.M8FRS 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Avant Technology J642GU42J7240NF 16GB

Avant Technology J642GU42J7240NF 16GB

Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

Kingston ACR24D4U7S8MB-8 8GB

Kingston ACR24D4U7S8MB-8 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Samsung M393A2K40BB1-CRC 16GB

Samsung M393A2K40BB1-CRC 16GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Corsair CMSX32GX4M2A2400C16 16GB

Corsair CMSX32GX4M2A2400C16 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

G Skill Intl F4-4000C19-16GTZR 16GB

G Skill Intl F4-4000C19-16GTZR 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Corsair CMK32GX4M4B3733C17 8GB

Corsair CMK32GX4M4B3733C17 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Avant Technology J641GU48J5213NG 8GB

Avant Technology J641GU48J5213NG 8GB

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

Micron Technology 8ATF1G64AZ-2G6J1 8GB

Micron Technology 8ATF1G64AZ-2G6J1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

UMAX Technology D4-2133-4GB-512X8-L 4GB

UMAX Technology D4-2133-4GB-512X8-L 4GB

Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

Samsung T471A1K43CB1-CRC 8GB

Samsung T471A1K43CB1-CRC 8GB