PUSKILL DDR3 1600 8G 8GB vs SK Hynix HMA425S6AFR6N-UH 2GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

SK Hynix HMA425S6AFR6N-UH 2GB

SK Hynix HMA425S6AFR6N-UH 2GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 86

左右 56% 更低的延时
更快的读取速度，GB/s

16.7 13.5

测试中的平均数值
更快的写入速度，GB/s

10.0 6.3

测试中的平均数值

SK Hynix HMA425S6AFR6N-UH 2GB

需要考虑的原因
SK Hynix HMA425S6AFR6N-UH 2GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

SK Hynix HMA425S6AFR6N-UH 2GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 86
读取速度，GB/s

16.7 13.5
写入速度，GB/s

10.0 6.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2753 1469

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology 78.CAGPP.ARW0B 8GB

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Corsair CMSO4GX3M1C1600C11 4GB

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Micron Technology 16ATF4G64HZ-3G2E2 32GB

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A-DATA Technology DQKD1A08 1GB

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Corsair CMU64GX4M4D3000C16 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB

GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB

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Corsair CMX4GX3M2A1600C9 2GB

Essencore Limited IM48GS88N26-JJJHA0 8GB

Essencore Limited IM48GS88N26-JJJHA0 8GB

Kingston 99U5584-007.A00LF 4GB

Kingston 99U5584-007.A00LF 4GB

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Kingston 9905702-008.A00G 8GB

Kingston 9905702-008.A00G 8GB