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PUSKILL DDR3 1600 8G 8GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB

PUSKILL DDR3 1600 8G 8GB vs SK Hynix V-GeN D4H4GL26A8TL5 4GB

总分
star star star star star
PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分
star star star star star
SK Hynix V-GeN D4H4GL26A8TL5 4GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB

差异 规格 评论

差异

PUSKILL DDR3 1600 8G 8GB 需要考虑的原因
PUSKILL DDR3 1600 8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 58
    左右 34% 更低的延时
  • 更快的写入速度，GB/s
    10.0 left arrow 9.3
    测试中的平均数值
SK Hynix V-GeN D4H4GL26A8TL5 4GB 需要考虑的原因
SK Hynix V-GeN D4H4GL26A8TL5 4GB
报告一个错误
  • 更快的读取速度，GB/s
    17.7 left arrow 16.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
PUSKILL DDR3 1600 8G 8GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 58
  • 读取速度，GB/s
    16.7 left arrow 17.7
  • 写入速度，GB/s
    10.0 left arrow 9.3
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2753 left arrow 1968

PUSKILL DDR3 1600 8G 8GB RAM的比较

A-DATA Technology DDR3 1866 8GB
Crucial Technology CT16G4DFD8266.M16FE 16GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Samsung M393A4K40BB0-CPB 32GB
Samsung M393A4K40BB0-CPB 32GB
内存RAM
Samsung M393A2G40EB1-CPB 16GB
Samsung M393A2G40EB1-CPB 16GB
Corsair CMK32GX4M2A2400C14 16GB
Corsair CMK32GX4M2A2400C14 16GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston 9905712-016.A00G 16GB
Kingston 9905712-016.A00G 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
SK Hynix HMA82GR7AFR8N-VK 16GB
SK Hynix HMA82GR7AFR8N-VK 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Ramaxel Technology RMSA3260MH78HAF-2666 8GB
Ramaxel Technology RMSA3260MH78HAF-2666 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Kingston KHX2400C14S4/4G 4GB
Kingston KHX2400C14S4/4G 4GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
SK Hynix HMA81GS6MFR8N-UH 8GB
SK Hynix HMA81GS6MFR8N-UH 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Kingston KHX2133C13D4/4GX 4GB
Kingston KHX2133C13D4/4GX 4GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Micron Technology 16ATF2G64AZ-2G3A1 16GB
Micron Technology 16ATF2G64AZ-2G3A1 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Avant Technology W6451U66J5213ND 4GB
Avant Technology W6451U66J5213ND 4GB
内存RAM