PUSKILL PJ16TFK1GM8 16GB vs Crucial Technology BL16G26C16U4B.16FE 16GB

总分

PUSKILL PJ16TFK1GM8 16GB

PUSKILL PJ16TFK1GM8 16GB

总分

Crucial Technology BL16G26C16U4B.16FE 16GB

Crucial Technology BL16G26C16U4B.16FE 16GB

差异规格评论

差异

PUSKILL PJ16TFK1GM8 16GB

需要考虑的原因
PUSKILL PJ16TFK1GM8 16GB

报告一个错误

Crucial Technology BL16G26C16U4B.16FE 16GB

需要考虑的原因
Crucial Technology BL16G26C16U4B.16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 41

左右 -11% 更低的延时
更快的读取速度，GB/s

15.8 12.7

测试中的平均数值
更快的写入速度，GB/s

14.3 10.7

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

PUSKILL PJ16TFK1GM8 16GB

Crucial Technology BL16G26C16U4B.16FE 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

41 37
读取速度，GB/s

12.7 15.8
写入速度，GB/s

10.7 14.3
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2621 3373

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM4B8G2J2400A14K 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Samsung 1600 CL10 Series 8GB

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Samsung M378A1K43BB1-CRC 8GB

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Samsung M393B2G70BH0-CK0 16GB

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A-DATA Technology 11137401 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Crucial Technology CT8G4DFD8213.C16FBR2 8GB

Crucial Technology CT8G4DFD8213.C16FBR2 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

G Skill Intl F4-3000C16-8GTRG 8GB

G Skill Intl F4-3000C16-8GTRG 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Golden Empire CL19-19-19 D4-2666 4GB

Golden Empire CL19-19-19 D4-2666 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Samsung M471A1K1KBB1-CRC 8GB