Qimonda 64T128020EDL2.5C2 1GB vs A-DATA Technology AO1E34RCSV1-BF1S 16GB

总分

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

总分

A-DATA Technology AO1E34RCSV1-BF1S 16GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

差异规格评论

差异

Qimonda 64T128020EDL2.5C2 1GB

需要考虑的原因
Qimonda 64T128020EDL2.5C2 1GB

报告一个错误

更快的读取速度，GB/s

3 16.8

测试中的平均数值

A-DATA Technology AO1E34RCSV1-BF1S 16GB

需要考虑的原因
A-DATA Technology AO1E34RCSV1-BF1S 16GB

报告一个错误

低于PassMark测试中的延时，ns

57 79

左右 -39% 更低的延时
更快的写入速度，GB/s

13.7 1,468.1

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Qimonda 64T128020EDL2.5C2 1GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

79 57
读取速度，GB/s

3,061.8 16.8
写入速度，GB/s

1,468.1 13.7
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

422 2792

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Kingston XN205T-MIE 16GB

Kingston XN205T-MIE 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Corsair CM4X16GE2666C16K4 16GB

Corsair CM4X16GE2666C16K4 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

Kingston KTC1G-UDIMM 1GB

Kingston KTC1G-UDIMM 1GB

Kingston X5H5PW-MIB 8GB

Kingston X5H5PW-MIB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

G Skill Intl F4-3600C16-8GTZR 8GB

G Skill Intl F4-3600C16-8GTZR 8GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

EVGA 16G-D4-2666-MR 4GB

EVGA 16G-D4-2666-MR 4GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Crucial Technology BL8G24C16U4B.8FD 8GB

Crucial Technology BL8G24C16U4B.8FD 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Micron Technology 4ATF51264HZ-2G6E1 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Corsair CM4X8GF2666C16K8 8GB

Corsair CM4X8GF2666C16K8 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Kingston K9CXF2-MIE 8GB

Kingston K9CXF2-MIE 8GB