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Qimonda 64T128020EDL2.5C2 1GB
Corsair CMU32GX4M2C3000C15 16GB

Qimonda 64T128020EDL2.5C2 1GB vs Corsair CMU32GX4M2C3000C15 16GB

总分
star star star star star
Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

总分
star star star star star
Corsair CMU32GX4M2C3000C15 16GB

Corsair CMU32GX4M2C3000C15 16GB

差异 规格 评论

差异

Qimonda 64T128020EDL2.5C2 1GB 需要考虑的原因
Qimonda 64T128020EDL2.5C2 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.4
    测试中的平均数值
Corsair CMU32GX4M2C3000C15 16GB 需要考虑的原因
Corsair CMU32GX4M2C3000C15 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 79
    左右 -147% 更低的延时
  • 更快的写入速度，GB/s
    13.3 left arrow 1,468.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Qimonda 64T128020EDL2.5C2 1GB
Corsair CMU32GX4M2C3000C15 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    79 left arrow 32
  • 读取速度，GB/s
    3,061.8 left arrow 17.4
  • 写入速度，GB/s
    1,468.1 left arrow 13.3
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    422 left arrow 3343

Qimonda 64T128020EDL2.5C2 1GB RAM的比较

Micron Technology 8HTF12864HDY-800G1 1GB
G Skill Intl F4-2666C18-8GFX 8GB

Corsair CMU32GX4M2C3000C15 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMR64GX4M8C3000C15 8GB
Corsair CMR64GX4M8C3000C15 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston HP32D4U2S8ME-16 16GB
Kingston HP32D4U2S8ME-16 16GB
内存RAM
Kingston HP32D4U8S8HC-8XR 8GB
Kingston HP32D4U8S8HC-8XR 8GB
Crucial Technology CB8GU2666.C8ET 8GB
Crucial Technology CB8GU2666.C8ET 8GB
内存RAM
Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
G Skill Intl F4-3000C15-4GTZB 4GB
G Skill Intl F4-3000C15-4GTZB 4GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Samsung M471A1G43DB0-CPB 8GB
Samsung M471A1G43DB0-CPB 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston 99U5702-094.A00G 8GB
Kingston 99U5702-094.A00G 8GB
内存RAM
Kingston KHX1600C9S3L/8G 8GB
Kingston KHX1600C9S3L/8G 8GB
Kingston HX421C14FB/4 4GB
Kingston HX421C14FB/4 4GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CB8GU2666.C8ET 8GB
Crucial Technology CB8GU2666.C8ET 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Apacer Technology 78.C1GQ5.C7C0B 8GB
Apacer Technology 78.C1GQ5.C7C0B 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
A-DATA Technology AO1P32NC8T1-BCSS 8GB
A-DATA Technology AO1P32NC8T1-BCSS 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
内存RAM