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Ramaxel Technology RMR5030ME68F9F1600 4GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
比较
Ramaxel Technology RMR5030ME68F9F1600 4GB vs Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
总分
Ramaxel Technology RMR5030ME68F9F1600 4GB
总分
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
差异
规格
评论
差异
需要考虑的原因
Ramaxel Technology RMR5030ME68F9F1600 4GB
报告一个错误
需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
报告一个错误
低于PassMark测试中的延时,ns
31
42
左右 -35% 更低的延时
更快的读取速度,GB/s
18
13.2
测试中的平均数值
更快的写入速度,GB/s
16.5
7.8
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Ramaxel Technology RMR5030ME68F9F1600 4GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
31
读取速度,GB/s
13.2
18.0
写入速度,GB/s
7.8
16.5
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2001
3729
Ramaxel Technology RMR5030ME68F9F1600 4GB RAM的比较
Ramaxel Technology RMR5030EB68F9W1600 4GB
Samsung M378A1K43BB2-CRC 8GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston ACR512X64D3S13C9G 4GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
Samsung M378B5673EH1-CF8 2GB
Kingston KHX2666C13D4/4GX 4GB
Corsair CMY16GX3M4A2133C8 4GB
Crucial Technology CT8G4DFS824A.M8FA 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Apacer Technology 78.BAGP4.AR50C 4GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3200C15-8GVK 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9965589-008.D02G 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston KF3600C16D4/8GX 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS8G4D240FSCK.8FD 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Teikon TMA451S6AFR8N-TFSC 4GB
Samsung M471B1G73QH0-YK0 8GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
SK Hynix HYMP125U64CP8-S6 2GB
Gloway International (HK) STK4U2400D17161C 16GB
报告一个错误
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