Ramaxel Technology RMR5040ED58E9W1600 4GB

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB vs Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

总分

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

总分

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

差异规格评论

差异

Ramaxel Technology RMR5040ED58E9W1600 4GB

需要考虑的原因
Ramaxel Technology RMR5040ED58E9W1600 4GB

报告一个错误

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 43

左右 -23% 更低的延时
更快的读取速度，GB/s

13.6 13.2

测试中的平均数值
更快的写入速度，GB/s

11.6 9.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMR5040ED58E9W1600 4GB

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 35
读取速度，GB/s

13.2 13.6
写入速度，GB/s

9.3 11.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2285 2701

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Gloway International (HK) STK4U2400D15082C 8GB

Gloway International (HK) STK4U2400D15082C 8GB

G Skill Intl F4-2133C15-16GFT 16GB

G Skill Intl F4-2133C15-16GFT 16GB

G Skill Intl F4-2400C16-4GFX 4GB

G Skill Intl F4-2400C16-4GFX 4GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

Vasekey M378A1K43BB2-CPB 8GB

Vasekey M378A1K43BB2-CPB 8GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Micron Technology 36ASF2G72PZ-2G3A3 16GB

Micron Technology 36ASF2G72PZ-2G3A3 16GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Micron Technology 9ASF1G72PZ-2G3B1 8GB

Micron Technology 9ASF1G72PZ-2G3B1 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Corsair CMD64GX4M8X3800C19 8GB

Corsair CMD64GX4M8X3800C19 8GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Kingston 9905700-012.A00G 8GB

Kingston 9905700-012.A00G 8GB

Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

SK Hynix HMA851U6JJR6N-VK 4GB

SK Hynix HMA851U6JJR6N-VK 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT8G4SFD8213.C16FBD2 8GB

Crucial Technology CT8G4SFD8213.C16FBD2 8GB