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Ramaxel Technology RMR5040ED58E9W1600 4GB
Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

Ramaxel Technology RMR5040ED58E9W1600 4GB vs Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

总分
star star star star star
Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

总分
star star star star star
Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

差异 规格 评论

差异

Ramaxel Technology RMR5040ED58E9W1600 4GB 需要考虑的原因
Ramaxel Technology RMR5040ED58E9W1600 4GB
报告一个错误
Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB 需要考虑的原因
Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 43
    左右 -26% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 9.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMR5040ED58E9W1600 4GB
Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 34
  • 读取速度，GB/s
    13.2 left arrow 16.9
  • 写入速度，GB/s
    9.3 left arrow 13.2
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2285 left arrow 3029

Ramaxel Technology RMR5040ED58E9W1600 4GB RAM的比较

G Skill Intl F3-1600C11-8GISL 8GB
A-DATA Technology DDR4 4133 8GB

Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB RAM的比较

Corsair CM5S16GM4800A40K2 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB
Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Shenzhen Technology Co Ltd 8GB
Shenzhen Technology Co Ltd 8GB
内存RAM
Avant Technology F641GU67F9333G 8GB
Avant Technology F641GU67F9333G 8GB
Golden Empire CL15-15-15 D4-2666 4GB
Golden Empire CL15-15-15 D4-2666 4GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Corsair CMD64GX4M8A2400C14 8GB
Corsair CMD64GX4M8A2400C14 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
内存RAM
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
内存RAM
Samsung M471B1G73EB0-YK0 8GB
Samsung M471B1G73EB0-YK0 8GB
Kingston K6VDX7-MIE 8GB
Kingston K6VDX7-MIE 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Team Group Inc. TEAMGROUP-SD4-3200 16GB
Team Group Inc. TEAMGROUP-SD4-3200 16GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-2933C16-16GTZRX 16GB
G Skill Intl F4-2933C16-16GTZRX 16GB
内存RAM
Transcend Information TS512MSK64W6H 4GB
Transcend Information TS512MSK64W6H 4GB
Crucial Technology BL32G32C16U4B.M16FB1 32GB
Crucial Technology BL32G32C16U4B.M16FB1 32GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston 9905624-016.A00G 8GB
Kingston 9905624-016.A00G 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Ramaxel Technology RMSA3320KE78HAF-3200 8GB
Ramaxel Technology RMSA3320KE78HAF-3200 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB
Chun Well Technology Holding Limited CL16-20-20 D4-3000
内存RAM