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Ramaxel Technology RMR5040MM58F9F1600 4GB
SK Hynix HMT451S6AFR8C-PB 4GB

Ramaxel Technology RMR5040MM58F9F1600 4GB vs SK Hynix HMT451S6AFR8C-PB 4GB

总分
star star star star star
Ramaxel Technology RMR5040MM58F9F1600 4GB

Ramaxel Technology RMR5040MM58F9F1600 4GB

总分
star star star star star
SK Hynix HMT451S6AFR8C-PB 4GB

SK Hynix HMT451S6AFR8C-PB 4GB

差异 规格 评论

差异

Ramaxel Technology RMR5040MM58F9F1600 4GB 需要考虑的原因
Ramaxel Technology RMR5040MM58F9F1600 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 45
    左右 16% 更低的延时
  • 更快的读取速度，GB/s
    15.1 left arrow 12.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.8 left arrow 7.7
    测试中的平均数值
SK Hynix HMT451S6AFR8C-PB 4GB 需要考虑的原因
SK Hynix HMT451S6AFR8C-PB 4GB
报告一个错误

规格

完整的技术规格清单
Ramaxel Technology RMR5040MM58F9F1600 4GB
SK Hynix HMT451S6AFR8C-PB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    38 left arrow 45
  • 读取速度，GB/s
    15.1 left arrow 12.2
  • 写入速度，GB/s
    9.8 left arrow 7.7
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2391 left arrow 1978

Ramaxel Technology RMR5040MM58F9F1600 4GB RAM的比较

Asgard VMA45UG-MEC1U2AW2 8GB

SK Hynix HMT451S6AFR8C-PB 4GB RAM的比较

G Skill Intl F5-5600J4040C16G 16GB
Mushkin 99[2/7/4]209F 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Mushkin 99[2/7/4]200F 8GB
Mushkin 99[2/7/4]200F 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Netac Technology Co Ltd EKBLACK4163216AD 8GB
Netac Technology Co Ltd EKBLACK4163216AD 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-3000C15-4GTZB 4GB
G Skill Intl F4-3000C15-4GTZB 4GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
PUSKILL PJ16TFK1GM8 16GB
PUSKILL PJ16TFK1GM8 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Crucial Technology BLM16G40C18U4B.M8FB1 16GB
Crucial Technology BLM16G40C18U4B.M8FB1 16GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
G Skill Intl F4-4000C19-16GTZKK 16GB
G Skill Intl F4-4000C19-16GTZKK 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9965589-030.D01G 8GB
Kingston 9965589-030.D01G 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Panram International Corporation PUD42400C154GNJW 4GB
Panram International Corporation PUD42400C154GNJW 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 3733 C17 Series 8GB
Patriot Memory (PDP Systems) 3733 C17 Series 8GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Shenzhen Technology Co Ltd 8GB
Shenzhen Technology Co Ltd 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-4133C19-4GTZ 4GB
G Skill Intl F4-4133C19-4GTZ 4GB
内存RAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB
Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston 9905625-066.A00G 16GB
Kingston 9905625-066.A00G 16GB
内存RAM