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Ramaxel Technology RMT3020EC58E9F1333 4GB
Kingston 9965600-027.A00G 16GB

Ramaxel Technology RMT3020EC58E9F1333 4GB vs Kingston 9965600-027.A00G 16GB

总分
star star star star star
Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

总分
star star star star star
Kingston 9965600-027.A00G 16GB

Kingston 9965600-027.A00G 16GB

差异 规格 评论

差异

Ramaxel Technology RMT3020EC58E9F1333 4GB 需要考虑的原因
Ramaxel Technology RMT3020EC58E9F1333 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 33
    左右 12% 更低的延时
Kingston 9965600-027.A00G 16GB 需要考虑的原因
Kingston 9965600-027.A00G 16GB
报告一个错误
  • 更快的读取速度，GB/s
    9.8 left arrow 9
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.9 left arrow 5.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMT3020EC58E9F1333 4GB
Kingston 9965600-027.A00G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 33
  • 读取速度，GB/s
    9.0 left arrow 9.8
  • 写入速度，GB/s
    5.7 left arrow 8.9
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1274 left arrow 2250

Ramaxel Technology RMT3020EC58E9F1333 4GB RAM的比较

Kingston ACR256X64D3S1333C9 2GB
Samsung M471B5673FH0-CF8 2GB

Kingston 9965600-027.A00G 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Kingston 9965600-027.A00G 16GB
Kingston 9965600-027.A00G 16GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Cortus SAS 8ATF51264AZ-2G1A1 4GB
Cortus SAS 8ATF51264AZ-2G1A1 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS8G4D240FSA.16FADG 8GB
Crucial Technology BLS8G4D240FSA.16FADG 8GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
Corsair CMD32GX4M4C3200C14M 8GB
Corsair CMD32GX4M4C3200C14M 8GB
内存RAM
SK Hynix HMT41GS6BFR8A-PB 8GB
SK Hynix HMT41GS6BFR8A-PB 8GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Samsung M378A5143TB2-CTD 4GB
Samsung M378A5143TB2-CTD 4GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-4266C19-8GTZR 8GB
G Skill Intl F4-4266C19-8GTZR 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston 9965640-016.A00G 32GB
Kingston 9965640-016.A00G 32GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-4133C19-8GTZKKF 8GB
G Skill Intl F4-4133C19-8GTZKKF 8GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
A-DATA Technology AO2P24HC8T1-BTBS 8GB
A-DATA Technology AO2P24HC8T1-BTBS 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
G Skill Intl F4-3333C16-8GTZKW 8GB
G Skill Intl F4-3333C16-8GTZKW 8GB
内存RAM