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Ramaxel Technology RMT3020EC58E9F1333 4GB
Samsung M386A8K40CM2-CRC 64GB

Ramaxel Technology RMT3020EC58E9F1333 4GB vs Samsung M386A8K40CM2-CRC 64GB

总分
star star star star star
Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

总分
star star star star star
Samsung M386A8K40CM2-CRC 64GB

Samsung M386A8K40CM2-CRC 64GB

差异 规格 评论

差异

Ramaxel Technology RMT3020EC58E9F1333 4GB 需要考虑的原因
Ramaxel Technology RMT3020EC58E9F1333 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 41
    左右 29% 更低的延时
  • 更快的读取速度，GB/s
    9 left arrow 8.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    5.7 left arrow 5.4
    测试中的平均数值
Samsung M386A8K40CM2-CRC 64GB 需要考虑的原因
Samsung M386A8K40CM2-CRC 64GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMT3020EC58E9F1333 4GB
Samsung M386A8K40CM2-CRC 64GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 41
  • 读取速度，GB/s
    9.0 left arrow 8.2
  • 写入速度，GB/s
    5.7 left arrow 5.4
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1274 left arrow 1704

Ramaxel Technology RMT3020EC58E9F1333 4GB RAM的比较

Kingston ACR256X64D3S1333C9 2GB
Samsung M471B5673FH0-CF8 2GB

Samsung M386A8K40CM2-CRC 64GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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A-DATA Technology DQVE1908 512MB
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Chun Well Technology Holding Limited CL18-20-20 D4-3600
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Apacer Technology 78.BAGM6.40C0B 4GB
Apacer Technology 78.BAGM6.40C0B 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
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Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C
Kingston KVR800D2E5-2G 2GB
Kingston KVR800D2E5-2G 2GB
内存RAM
DATARAM 2133MHz 11-11-11 8GB
DATARAM 2133MHz 11-11-11 8GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston 9965596-016.B01G 8GB
Kingston 9965596-016.B01G 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMD16GX4M4B2133C10 4GB
Corsair CMD16GX4M4B2133C10 4GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Teikon TMA81GU6AFR8N-UHSC 8GB
Teikon TMA81GU6AFR8N-UHSC 8GB
内存RAM
Kingston 99U5428-046.A00LF 4GB
Kingston 99U5428-046.A00LF 4GB
G Skill Intl F4-4400C18-8GTRG 8GB
G Skill Intl F4-4400C18-8GTRG 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3600C16-8GVKC 8GB
G Skill Intl F4-3600C16-8GVKC 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Crucial Technology CT4G4SFS824A.C8FE 4GB
Crucial Technology CT4G4SFS824A.C8FE 4GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Avant Technology J642GU42J5213N4 16GB
Avant Technology J642GU42J5213N4 16GB
内存RAM