Ramaxel Technology RMT3170EB68F9W1600 4GB vs G Skill Intl F4-4133C19-8GTZKKF 8GB

总分

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

总分

G Skill Intl F4-4133C19-8GTZKKF 8GB

G Skill Intl F4-4133C19-8GTZKKF 8GB

差异规格评论

差异

Ramaxel Technology RMT3170EB68F9W1600 4GB

需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB

报告一个错误

G Skill Intl F4-4133C19-8GTZKKF 8GB

需要考虑的原因
G Skill Intl F4-4133C19-8GTZKKF 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 43

左右 -43% 更低的延时
更快的读取速度，GB/s

21.4 11.4

测试中的平均数值
更快的写入速度，GB/s

17.8 7.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3170EB68F9W1600 4GB

G Skill Intl F4-4133C19-8GTZKKF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 30
读取速度，GB/s

11.4 21.4
写入速度，GB/s

7.7 17.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1823 4156

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT16G4SFS832A.M8FB 16GB

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Samsung M378A1K43EB2-CWE 8GB

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Samsung M471A2K43EB1-CTD 16GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Corsair CMN32GX4M2Z3200C16 16GB

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Samsung M386B4G70DM0-CMA4 32GB

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Avant Technology F6451U64F9333G 4GB

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Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung M471A1K1KCB1-CRC 8GB

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Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Corsair CMW64GX4M4Z2933C16 16GB

Corsair CMW64GX4M4Z2933C16 16GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

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Samsung M393A2G40DB1-CRC 16GB

Samsung M393A2G40DB1-CRC 16GB