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Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-2800C17-8GVR 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB vs G Skill Intl F4-2800C17-8GVR 8GB

总分
star star star star star
Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

总分
star star star star star
G Skill Intl F4-2800C17-8GVR 8GB

G Skill Intl F4-2800C17-8GVR 8GB

差异 规格 评论

差异

Ramos Technology EWB8GB681CA3-16IC 8GB 需要考虑的原因
Ramos Technology EWB8GB681CA3-16IC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 29
    左右 14% 更低的延时
G Skill Intl F4-2800C17-8GVR 8GB 需要考虑的原因
G Skill Intl F4-2800C17-8GVR 8GB
报告一个错误
  • 更快的写入速度，GB/s
    11.2 left arrow 9.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-2800C17-8GVR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 29
  • 读取速度，GB/s
    15.3 left arrow 15.3
  • 写入速度，GB/s
    9.8 left arrow 11.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2646 left arrow 2810

Ramos Technology EWB8GB681CA3-16IC 8GB RAM的比较

Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EEB8GB681CAE-16IC 8GB

G Skill Intl F4-2800C17-8GVR 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT2K102464BD160B 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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G Skill Intl F4-2800C17-8GVR 8GB
G Skill Intl F4-2800C17-8GVR 8GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
Kingston ACR16D3LS1KNG/4G 4GB
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Corsair CM4X4GF2400Z16K4 4GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
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G Skill Intl F4-2400C15-8GTZR 8GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
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Samsung M378A5244CB0-CTD 4GB
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Crucial Technology CT16G4SFS8266.C8FE 16GB
内存RAM