Ramos Technology EWB8GB681CA3-16IC 8GB vs Micron Technology 8ATF1G64HZ-2G3A1 8GB

总分

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

总分

Micron Technology 8ATF1G64HZ-2G3A1 8GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

差异规格评论

差异

Ramos Technology EWB8GB681CA3-16IC 8GB

需要考虑的原因
Ramos Technology EWB8GB681CA3-16IC 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 29

左右 14% 更低的延时
更快的读取速度，GB/s

15.3 13.4

测试中的平均数值
更快的写入速度，GB/s

9.8 9.5

测试中的平均数值

Micron Technology 8ATF1G64HZ-2G3A1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-2G3A1 8GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Ramos Technology EWB8GB681CA3-16IC 8GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 29
读取速度，GB/s

15.3 13.4
写入速度，GB/s

9.8 9.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2646 2312

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston K6VDX7-HYD 8GB

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Crucial Technology BLS8G4D26BFSB.16FBR2 8GB

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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-2400C14-16GVK 16GB

G Skill Intl F4-2400C14-16GVK 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Crucial Technology CT8G4SFS632A.M4FE 8GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Crucial Technology BL8G30C15U4W.M8FE1 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB