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Ramos Technology EWB8GB681CA3-16IC 8GB
Samsung M378A2K43CB1-CRC 16GB

Ramos Technology EWB8GB681CA3-16IC 8GB vs Samsung M378A2K43CB1-CRC 16GB

总分
star star star star star
Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

总分
star star star star star
Samsung M378A2K43CB1-CRC 16GB

Samsung M378A2K43CB1-CRC 16GB

差异 规格 评论

差异

Ramos Technology EWB8GB681CA3-16IC 8GB 需要考虑的原因
Ramos Technology EWB8GB681CA3-16IC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 32
    左右 22% 更低的延时
Samsung M378A2K43CB1-CRC 16GB 需要考虑的原因
Samsung M378A2K43CB1-CRC 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.6 left arrow 15.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.6 left arrow 9.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Ramos Technology EWB8GB681CA3-16IC 8GB
Samsung M378A2K43CB1-CRC 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 32
  • 读取速度，GB/s
    15.3 left arrow 15.6
  • 写入速度，GB/s
    9.8 left arrow 10.6
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2646 left arrow 2900

Ramos Technology EWB8GB681CA3-16IC 8GB RAM的比较

Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EEB8GB681CAE-16IC 8GB

Samsung M378A2K43CB1-CRC 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Samsung M378A2K43CB1-CRC 16GB
Samsung M378A2K43CB1-CRC 16GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Crucial Technology BL16G30C15U4WL.M16FE 16GB
Crucial Technology BL16G30C15U4WL.M16FE 16GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston 9905713-001.A00G 4GB
Kingston 9905713-001.A00G 4GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Kingston 9905678-027.A00G 8GB
Kingston 9905678-027.A00G 8GB
内存RAM
Samsung M378B5173EB0-YK0 4GB
Samsung M378B5173EB0-YK0 4GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kingston 9905625-011.A00G 8GB
Kingston 9905625-011.A00G 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston KMKYF9-MIH 8GB
Kingston KMKYF9-MIH 8GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Mushkin 99[2/7/4]197F 8GB
Mushkin 99[2/7/4]197F 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Kingston KHX3200C16D4/8GX 8GB
Kingston KHX3200C16D4/8GX 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4DFD8213.C16FA11 8GB
Crucial Technology CT8G4DFD8213.C16FA11 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB
内存RAM