RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramos Technology RMB4GB58BCA3-13HC 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
比较
Ramos Technology RMB4GB58BCA3-13HC 4GB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
总分
Ramos Technology RMB4GB58BCA3-13HC 4GB
总分
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
差异
规格
评论
差异
需要考虑的原因
Ramos Technology RMB4GB58BCA3-13HC 4GB
报告一个错误
低于PassMark测试中的延时,ns
23
32
左右 28% 更低的延时
需要考虑的原因
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
报告一个错误
更快的读取速度,GB/s
19.4
11.6
测试中的平均数值
更快的写入速度,GB/s
16.3
5.6
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Ramos Technology RMB4GB58BCA3-13HC 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
23
32
读取速度,GB/s
11.6
19.4
写入速度,GB/s
5.6
16.3
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1751
3726
Ramos Technology RMB4GB58BCA3-13HC 4GB RAM的比较
Ramos Technology RMB4GB584CA3-13HC 4GB
takeMS International AG TMS4GB364E081139EM 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
G Skill Intl F4-3200C16-32GTRG 32GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
Kingston 99U5471-012.A00LF 4GB
G Skill Intl F3-10600CL9-4GBSQ 4GB
Samsung M471B5273DH0-CK0 4GB
G Skill Intl F4-4600C18-8GTZR 8GB
Samsung M3 78T2863QZS-CF7 1GB
Transcend Information JM2666HLB-8G 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Samsung V-GeN D4S16GL32A8TS 16GB
Samsung 1600 CL10 Series 8GB
Kingston HP24D4U7S8MBP-8 8GB
Kingston KP4T2F-PSB 4GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-4000C19-8GTZKW 8GB
SpecTek Incorporated ?????????????????? 2GB
Corsair CMSO32GX4M2A2133C15 16GB
Kingston KVR800D2N6/2G 2GB
Micron Technology CT8G4DFD8213.16FA2 8GB
Samsung M391B5673FH0-CH9 2GB
Crucial Technology CT32G4DFD832A.M16FB 32GB
SK Hynix HMT351S6CFR8C-PB 4GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Kingston KV0M5R-MIE 8GB
报告一个错误
×
Bug description
Source link