Ramos Technology RMB4GB58BCA3-13HC 4GB vs Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

总分

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

总分

Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

差异规格评论

差异

Ramos Technology RMB4GB58BCA3-13HC 4GB

需要考虑的原因
Ramos Technology RMB4GB58BCA3-13HC 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 33

左右 30% 更低的延时

Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

需要考虑的原因
Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

报告一个错误

更快的读取速度，GB/s

15.7 11.6

测试中的平均数值
更快的写入速度，GB/s

11.9 5.6

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Ramos Technology RMB4GB58BCA3-13HC 4GB

Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 33
读取速度，GB/s

11.6 15.7
写入速度，GB/s

5.6 11.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1751 2634

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Asgard VMA45UG-MEC1U2BQ2 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Micron Technology 8ATF2G64AZ-3G2B1 16GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Corsair CMK8GX4M2B3733C17 4GB

Corsair CMK8GX4M2B3733C17 4GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

Crucial Technology CT51264BD1339.M16F 4GB

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AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Kingston KM0VW4-MID 8GB

Kingston KM0VW4-MID 8GB