Ramos Technology RMB4GB58BCA3-13HC 4GB vs G Skill Intl F4-2400C15-8GRK 8GB

总分

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

总分

G Skill Intl F4-2400C15-8GRK 8GB

G Skill Intl F4-2400C15-8GRK 8GB

差异规格评论

差异

Ramos Technology RMB4GB58BCA3-13HC 4GB

需要考虑的原因
Ramos Technology RMB4GB58BCA3-13HC 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 39

左右 41% 更低的延时

G Skill Intl F4-2400C15-8GRK 8GB

需要考虑的原因
G Skill Intl F4-2400C15-8GRK 8GB

报告一个错误

更快的读取速度，GB/s

14.1 11.6

测试中的平均数值
更快的写入速度，GB/s

11.0 5.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Ramos Technology RMB4GB58BCA3-13HC 4GB

G Skill Intl F4-2400C15-8GRK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 39
读取速度，GB/s

11.6 14.1
写入速度，GB/s

5.6 11.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1751 2940

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLT4G4D26AFTA.8FADG 4GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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G Skill Intl F4-3333C16-8GTZSW 8GB

G Skill Intl F4-3333C16-8GTZSW 8GB

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G Skill Intl F4-4000C14-16GTZR 16GB

Crucial Technology CT16G4DFD824A.M16FA 16GB

Crucial Technology CT16G4DFD824A.M16FA 16GB

Samsung M3 91T2953GZ3-CF7 1GB

Samsung M3 91T2953GZ3-CF7 1GB

Kllisre 0000 8GB

Kllisre 0000 8GB