Ramos Technology RMB4GB58BCA3-13HC 4GB vs G Skill Intl F4-3200C16-8GSXWB 8GB

总分

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

总分

G Skill Intl F4-3200C16-8GSXWB 8GB

G Skill Intl F4-3200C16-8GSXWB 8GB

差异规格评论

差异

Ramos Technology RMB4GB58BCA3-13HC 4GB

需要考虑的原因
Ramos Technology RMB4GB58BCA3-13HC 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 27

左右 15% 更低的延时

G Skill Intl F4-3200C16-8GSXWB 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GSXWB 8GB

报告一个错误

更快的读取速度，GB/s

18 11.6

测试中的平均数值
更快的写入速度，GB/s

13.5 5.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Ramos Technology RMB4GB58BCA3-13HC 4GB

G Skill Intl F4-3200C16-8GSXWB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 27
读取速度，GB/s

11.6 18.0
写入速度，GB/s

5.6 13.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1751 3293

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A1K43DB2-CVF 8GB

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AMD R5316G1609U2K 8GB

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Crucial Technology CT32G4DFD832A.C16FE 32GB

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Kingston 99P5474-014.A00LF 4GB

Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

G Skill Intl F4-3200C16-16GTZR 16GB

G Skill Intl F4-3200C16-16GTZR 16GB

Mushkin 996902 2GB

Mushkin 996902 2GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

Kingston 99U5474-013.A00LF 2GB

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SK Hynix HMA42GR7AFR4N-TF 16GB

SK Hynix HMA42GR7AFR4N-TF 16GB