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Samsung 1600 CL10 Series 8GB
Avant Technology J644GU44J1293NF 32GB

Samsung 1600 CL10 Series 8GB vs Avant Technology J644GU44J1293NF 32GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Avant Technology J644GU44J1293NF 32GB

Avant Technology J644GU44J1293NF 32GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 36
    左右 31% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 14.4
    测试中的平均数值
Avant Technology J644GU44J1293NF 32GB 需要考虑的原因
Avant Technology J644GU44J1293NF 32GB
报告一个错误
  • 更快的写入速度，GB/s
    14.7 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    23400 left arrow 12800
    左右 1.83 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Avant Technology J644GU44J1293NF 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 36
  • 读取速度，GB/s
    16.1 left arrow 14.4
  • 写入速度，GB/s
    10.1 left arrow 14.7
  • 内存带宽，mbps
    12800 left arrow 23400
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 3092

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Avant Technology J644GU44J1293NF 32GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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A-DATA Technology AM2P24HC4R1-BUPS 4GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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内存RAM
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内存RAM
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Samsung M471B5674QH0-YK0 2GB
Samsung V-GeN D4S8GL32A8TL 8GB
Samsung V-GeN D4S8GL32A8TL 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
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Corsair CM4X16GE2666C18S4 16GB
内存RAM