Samsung 1600 CL10 Series 8GB vs Crucial Technology CT4G4DFS8213.C8FAR 4GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Crucial Technology CT4G4DFS8213.C8FAR 4GB

Crucial Technology CT4G4DFS8213.C8FAR 4GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 28

左右 11% 更低的延时
更快的读取速度，GB/s

16.1 12.6

测试中的平均数值
更快的写入速度，GB/s

10.1 9.9

测试中的平均数值

Crucial Technology CT4G4DFS8213.C8FAR 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FAR 4GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Crucial Technology CT4G4DFS8213.C8FAR 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 28
读取速度，GB/s

16.1 12.6
写入速度，GB/s

10.1 9.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2764 2490

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C

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Samsung M3 78T5663RZ3-CE6 2GB

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Samsung V-GeN D4S4GL30A16TS5 4GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

Teikon TMA851U6CJR6N-VKSC 4GB

Teikon TMA851U6CJR6N-VKSC 4GB