Samsung 1600 CL10 Series 8GB vs Kingmax Semiconductor GSJF62F-DA---------- 4GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Kingmax Semiconductor GSJF62F-DA---------- 4GB

Kingmax Semiconductor GSJF62F-DA---------- 4GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 95

左右 74% 更低的延时
更快的读取速度，GB/s

16.1 14.4

测试中的平均数值
更快的写入速度，GB/s

10.1 6.4

测试中的平均数值

Kingmax Semiconductor GSJF62F-DA---------- 4GB

需要考虑的原因
Kingmax Semiconductor GSJF62F-DA---------- 4GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Kingmax Semiconductor GSJF62F-DA---------- 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 95
读取速度，GB/s

16.1 14.4
写入速度，GB/s

10.1 6.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2764 1450

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905701-018.A00G 16GB

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Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

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Corsair CM4X16GF3200C22S2 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMD32GX4M4B3466C16 8GB

Corsair CMD32GX4M4B3466C16 8GB

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SK Hynix HMT41GS6MFR8C-PB 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

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Samsung M393B1G70QH0-YK0 8GB

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G Skill Intl F4-3200C16-8GTZ 8GB