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Samsung 1600 CL10 Series 8GB
Kingston CBD26D4U9D8ME-16 16GB

Samsung 1600 CL10 Series 8GB vs Kingston CBD26D4U9D8ME-16 16GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Kingston CBD26D4U9D8ME-16 16GB

Kingston CBD26D4U9D8ME-16 16GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 30
    左右 17% 更低的延时
Kingston CBD26D4U9D8ME-16 16GB 需要考虑的原因
Kingston CBD26D4U9D8ME-16 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.5 left arrow 16.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.8 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Kingston CBD26D4U9D8ME-16 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 30
  • 读取速度，GB/s
    16.1 left arrow 17.5
  • 写入速度，GB/s
    10.1 left arrow 14.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 3575

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Kingston CBD26D4U9D8ME-16 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BLS4G3D1609DS1S00 4GB
Crucial Technology BLS4G3D1609DS1S00 4GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Corsair CMK16GX4M2C3000C16 8GB
Corsair CMK16GX4M2C3000C16 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Kingston CBD26D4U9D8ME-16 16GB
Kingston CBD26D4U9D8ME-16 16GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
Kingston KHX3600C17D4/16GX 16GB
Kingston KHX3600C17D4/16GX 16GB
内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
内存RAM
Kingston KHX1600C10D3/8G 8GB
Kingston KHX1600C10D3/8G 8GB
Kingston KHX1600C10D3/4G 4GB
Kingston KHX1600C10D3/4G 4GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Crucial Technology BLS8G4D240FSA.16FBD 8GB
Crucial Technology BLS8G4D240FSA.16FBD 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Smart Modular SMS4WEC3C0K0446SCG 4GB
Smart Modular SMS4WEC3C0K0446SCG 4GB
内存RAM
Kingston 99U5584-010.A00LF 4GB
Kingston 99U5584-010.A00LF 4GB
Crucial Technology CT4G4SFS824A.C8FE 4GB
Crucial Technology CT4G4SFS824A.C8FE 4GB
内存RAM
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Corsair CMK16GX4M4B3600C18 4GB
Corsair CMK16GX4M4B3600C18 4GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Transcend Information TS512MLH64V4H 4GB
Transcend Information TS512MLH64V4H 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905624-018.A00G 8GB
Kingston 9905624-018.A00G 8GB
内存RAM
Kingston ACR16D3LS1KBG/8G 8GB
Kingston ACR16D3LS1KBG/8G 8GB
Patriot Memory (PDP Systems) PSD44G240081S 4GB
Patriot Memory (PDP Systems) PSD44G240081S 4GB
内存RAM
Corsair CM2X1024-8500C5D 1GB
Corsair CM2X1024-8500C5D 1GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
内存RAM