Samsung 1600 CL10 Series 8GB vs Kingston KH2400C15D4/8 8GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Kingston KH2400C15D4/8 8GB

Kingston KH2400C15D4/8 8GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 29

左右 14% 更低的延时
更快的读取速度，GB/s

16.1 13.4

测试中的平均数值

Kingston KH2400C15D4/8 8GB

需要考虑的原因
Kingston KH2400C15D4/8 8GB

报告一个错误

更快的写入速度，GB/s

11.3 10.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Kingston KH2400C15D4/8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 29
读取速度，GB/s

16.1 13.4
写入速度，GB/s

10.1 11.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2764 2892

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

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Kingston KHX3200C16D4/16GX 16GB

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Wilk Elektronik S.A. GY2400D464L15/8G 8GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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Samsung M393B1G70BH0-YK0 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

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Apacer Technology 78.CAGPN.DF40B 8GB

Samsung M471A1G43EB1-CPB 8GB

Samsung M471A1G43EB1-CPB 8GB

Samsung M471A1G43DB0-CPB 8GB

Samsung M471A1G43DB0-CPB 8GB

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Hexon Technology Pte Ltd HEXON 1GB

Corsair CMD32GX4M2B2800C14 16GB

Corsair CMD32GX4M2B2800C14 16GB