Samsung 1600 CL10 Series 8GB vs Micron Technology 4ATF51264HZ-2G6E3 4GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Micron Technology 4ATF51264HZ-2G6E3 4GB

Micron Technology 4ATF51264HZ-2G6E3 4GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 31

左右 19% 更低的延时

Micron Technology 4ATF51264HZ-2G6E3 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G6E3 4GB

报告一个错误

更快的读取速度，GB/s

16.6 16.1

测试中的平均数值
更快的写入速度，GB/s

12.5 10.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Micron Technology 4ATF51264HZ-2G6E3 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 31
读取速度，GB/s

16.1 16.6
写入速度，GB/s

10.1 12.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2764 2605

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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SK Hynix HMA82GU6MFR8N-TF 16GB