Samsung 1600 CL10 Series 8GB vs Patriot Memory (PDP Systems) PSD432G32002S 32GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Patriot Memory (PDP Systems) PSD432G32002S 32GB

Patriot Memory (PDP Systems) PSD432G32002S 32GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 53

左右 53% 更低的延时
更快的读取速度，GB/s

16.1 14.9

测试中的平均数值

Patriot Memory (PDP Systems) PSD432G32002S 32GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD432G32002S 32GB

报告一个错误

更快的写入速度，GB/s

13.5 10.1

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Patriot Memory (PDP Systems) PSD432G32002S 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 53
读取速度，GB/s

16.1 14.9
写入速度，GB/s

10.1 13.5
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2764 2643

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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G Skill Intl F4-3000C16-16GTZN 16GB

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Peak Electronics 256X64M-67E 2GB

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Samsung DDR3 8GB 1600MHz 8GB

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Corsair CMD16GX4M4B3000C14 4GB

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Chun Well Technology Holding Limited D4U0832161B 8GB

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Samsung M471B5273EB0-CK0 4GB

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Kingston KHX2933C17S4/32G 32GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

G Skill Intl F4-3600C14-16GTRS 16GB

G Skill Intl F4-3600C14-16GTRS 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

V-Color Technology Inc. TL48G32S8KGRGB16 8GB

V-Color Technology Inc. TL48G32S8KGRGB16 8GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Crucial Technology BLS8G4D32AESEK.M8FE1 8GB

Crucial Technology BLS8G4D32AESEK.M8FE1 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-3400C16-4GRBD 4GB

G Skill Intl F4-3400C16-4GRBD 4GB