Samsung DDR3 8GB 1600MHz 8GB vs Crucial Technology BLS4G4D26BFSB.8FD2 4GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

需要考虑的原因
Crucial Technology BLS4G4D26BFSB.8FD2 4GB

报告一个错误

低于PassMark测试中的延时，ns

18 43

左右 -139% 更低的延时
更快的读取速度，GB/s

21.1 14.9

测试中的平均数值
更快的写入速度，GB/s

16.7 9.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 18
读取速度，GB/s

14.9 21.1
写入速度，GB/s

9.6 16.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2506 3286

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Corsair CMSX8GX4M2A2400C16 4GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Corsair CMX8GX3M2A2000C9 4GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB