Samsung DDR3 8GB 1600MHz 8GB vs Crucial Technology CT16G4DFRA266.C8FE 16GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Crucial Technology CT16G4DFRA266.C8FE 16GB

Crucial Technology CT16G4DFRA266.C8FE 16GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Crucial Technology CT16G4DFRA266.C8FE 16GB

需要考虑的原因
Crucial Technology CT16G4DFRA266.C8FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 43

左右 -39% 更低的延时
更快的读取速度，GB/s

16.3 14.9

测试中的平均数值
更快的写入速度，GB/s

11.7 9.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology CT16G4DFRA266.C8FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 31
读取速度，GB/s

14.9 16.3
写入速度，GB/s

9.6 11.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2506 3179

RAM Latency Calculator

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最新比较

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Samsung DDR3 8GB 1600MHz 8GB

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Crucial Technology CT16G4DFRA266.C8FE 16GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Micron Technology 4ATF51264HZ-2G6E3 4GB

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Crucial Technology BL16G32C16U4RL.M16FE 16GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

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Samsung M378A1G43DB0-CPB 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

Corsair CM4X4GF2666Z16K4 4GB

Corsair CM4X4GF2666Z16K4 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

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Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Corsair CMWX8GF2666C16W4 8GB

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AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Kingston CBD24D4S7S8MB-8 8GB

Kingston CBD24D4S7S8MB-8 8GB