Samsung DDR3 8GB 1600MHz 8GB vs Crucial Technology CT16G4S24AM.M16FB 16GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Crucial Technology CT16G4S24AM.M16FB 16GB

Crucial Technology CT16G4S24AM.M16FB 16GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Crucial Technology CT16G4S24AM.M16FB 16GB

需要考虑的原因
Crucial Technology CT16G4S24AM.M16FB 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 43

左右 -79% 更低的延时
更快的读取速度，GB/s

16.8 14.9

测试中的平均数值
更快的写入速度，GB/s

13.3 9.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology CT16G4S24AM.M16FB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 24
读取速度，GB/s

14.9 16.8
写入速度，GB/s

9.6 13.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2506 3009

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Smart Modular SF464128CKHI6DFSEG 4GB

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Samsung M471A1K1KBB0-CPB 8GB

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Kingston 9905469-143.A00LF 4GB

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Corsair CMSX32GX4M2A2400C16 16GB

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Samsung M471B1G73DB0-YK0 8GB

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Apacer Technology D12.2344DT.001 4GB

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Crucial Technology BLS4G4D240FSA.8FAD 4GB

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Kingston 9905678-006.A00G 4GB

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SK Hynix 8GB36-H9 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

V-GEN D4S8GL32A8TS 8GB

V-GEN D4S8GL32A8TS 8GB

Apacer Technology 78.B1GET.AU00C 4GB

Apacer Technology 78.B1GET.AU00C 4GB

Mushkin MRA4S320GJJM32G 32GB

Mushkin MRA4S320GJJM32G 32GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Corsair CMW16GX4M2A2666C16 8GB

Corsair CMW16GX4M2A2666C16 8GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB

SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB

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Kingston 9905734-062.A00G 32GB