Samsung DDR3 8GB 1600MHz 8GB vs Crucial Technology CT32G4SFD832A.M16FF 32GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Crucial Technology CT32G4SFD832A.M16FF 32GB

Crucial Technology CT32G4SFD832A.M16FF 32GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

低于PassMark测试中的延时，ns

43 51

左右 16% 更低的延时

Crucial Technology CT32G4SFD832A.M16FF 32GB

需要考虑的原因
Crucial Technology CT32G4SFD832A.M16FF 32GB

报告一个错误

更快的读取速度，GB/s

16.3 14.9

测试中的平均数值
更快的写入速度，GB/s

14.7 9.6

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology CT32G4SFD832A.M16FF 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 51
读取速度，GB/s

14.9 16.3
写入速度，GB/s

9.6 14.7
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2506 2874

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F3-10600CL9-2GBNT 2GB

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Apacer Technology 78.B1GM3.AF00B 4GB

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Heoriady M378A1K43BB2-CTD 8GB

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Kingmax Semiconductor KLDE88F-B8MO5 2GB

Kingmax Semiconductor KLDE88F-B8MO5 2GB

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Corsair CMR64GX4M4C3000C15 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

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Crucial Technology CT4G4DFS824A.M8FE 4GB

SK Hynix HMA81GS6DJR8N-XN 8GB

SK Hynix HMA81GS6DJR8N-XN 8GB

A-DATA Technology AD5U48008G-B 8GB

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Samsung M393B1G70BH0-YK0 8GB

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G Skill Intl F4-3400C16-16GVR 16GB

Kingston 99U5428-040.A00LF 4GB

Kingston 99U5428-040.A00LF 4GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB