Samsung DDR3 8GB 1600MHz 8GB vs G Skill Intl F4-3200C14-16GTZKO 16GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

G Skill Intl F4-3200C14-16GTZKO 16GB

G Skill Intl F4-3200C14-16GTZKO 16GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

G Skill Intl F4-3200C14-16GTZKO 16GB

需要考虑的原因
G Skill Intl F4-3200C14-16GTZKO 16GB

报告一个错误

低于PassMark测试中的延时，ns

18 43

左右 -139% 更低的延时
更快的读取速度，GB/s

21.3 14.9

测试中的平均数值
更快的写入速度，GB/s

15.8 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

G Skill Intl F4-3200C14-16GTZKO 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 18
读取速度，GB/s

14.9 21.3
写入速度，GB/s

9.6 15.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2506 3778

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G4DFD8213.C16FADP 8GB

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Corsair CMU32GX4M4C3200C16 8GB

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Corsair CMD8GX3M2A2933C12 4GB

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Apacer Technology 78.C1GET.9K10C 8GB

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Crucial Technology BLS8G4D26BFSE.16FB 8GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Kingston 9965589-006.E00G 8GB

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Samsung M391B5273DH0-YK0 4GB

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Samsung M393B5170EH1-CH9 4GB

Essencore Limited KD48GU88C-26N1600 8GB

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SK Hynix HMT425S6CFR6A-PB 2GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Corsair CMK32GX5M2B5600C36 16GB

Corsair CMK32GX5M2B5600C36 16GB

Apacer Technology 78.CAGPL.ARC0B 8GB

Apacer Technology 78.CAGPL.ARC0B 8GB