Samsung DDR3 8GB 1600MHz 8GB vs G Skill Intl F4-4000C18-16GTRS 16GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

G Skill Intl F4-4000C18-16GTRS 16GB

G Skill Intl F4-4000C18-16GTRS 16GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

G Skill Intl F4-4000C18-16GTRS 16GB

需要考虑的原因
G Skill Intl F4-4000C18-16GTRS 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 43

左右 -48% 更低的延时
更快的读取速度，GB/s

20.8 14.9

测试中的平均数值
更快的写入速度，GB/s

16.9 9.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

G Skill Intl F4-4000C18-16GTRS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 29
读取速度，GB/s

14.9 20.8
写入速度，GB/s

9.6 16.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2506 3901

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

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SK Hynix DDR2 800 2G 2GB

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Kingston 9905703-011.A00G 16GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

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AMD R5316G1609U2K 8GB

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Kingston XN205T-MIE2 16GB

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

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Crucial Technology CT32G4DFD8266.C16FE 32GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Samsung M378B5273EB0-CK0 4GB

Micron Technology 8ATF1G64HZ-2G6J1 8GB

Micron Technology 8ATF1G64HZ-2G6J1 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingston ACR26D4S9D8ME-16 16GB

Kingston ACR26D4S9D8ME-16 16GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

G Skill Intl F4-3200C16-4GRB 4GB

G Skill Intl F4-3200C16-4GRB 4GB