Samsung DDR3 8GB 1600MHz 8GB vs Heoriady M471A1K43CB1-CTD 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Heoriady M471A1K43CB1-CTD 8GB

Heoriady M471A1K43CB1-CTD 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

低于PassMark测试中的延时，ns

43 51

左右 16% 更低的延时
更快的读取速度，GB/s

14.9 10.5

测试中的平均数值
更快的写入速度，GB/s

9.6 5.5

测试中的平均数值

Heoriady M471A1K43CB1-CTD 8GB

需要考虑的原因
Heoriady M471A1K43CB1-CTD 8GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Heoriady M471A1K43CB1-CTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 51
读取速度，GB/s

14.9 10.5
写入速度，GB/s

9.6 5.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2506 1941

RAM Latency Calculator

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最新比较

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Kingston K6VDX7-MIE 8GB

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Kingston KP4T2F-PSB 4GB

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Micron Technology 36ASF2G72PZ-2G1B1 16GB

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Peak Electronics 256X64M-67E 2GB

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G Skill Intl F4-3466C16-8GTZSW 8GB

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Kingston KHX2133C11D3/4GX 4GB

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G Skill Intl F4-3600C14-8GTZRA 8GB

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Crucial Technology BL8G30C15U4BL.M8FE1 8GB

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Essencore Limited KD48GU88C-26N1600 8GB

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AMD AE34G1601U1 4GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Corsair CMWX8GD3000C16W4D 8GB

Corsair CMWX8GD3000C16W4D 8GB

Samsung M4 70T2953EZ3-CE6 1GB

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Micron Technology 8ATF1G64HZ-2G6D1 8GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

Kingston ACR256X64D3S1333C9 2GB

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Corsair CMU32GX4M2C3000C16 16GB

Corsair CMU32GX4M2C3000C16 16GB

Kingston 9905403-500.A01LF 8GB

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Crucial Technology CT4G4SFS824A.C8FE 4GB

Crucial Technology CT4G4SFS824A.C8FE 4GB