Samsung DDR3 8GB 1600MHz 8GB vs Kingston 9965662-002.A01G 16GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Kingston 9965662-002.A01G 16GB

Kingston 9965662-002.A01G 16GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

更快的读取速度，GB/s

14.9 8.6

测试中的平均数值
更快的写入速度，GB/s

9.6 8.3

测试中的平均数值

Kingston 9965662-002.A01G 16GB

需要考虑的原因
Kingston 9965662-002.A01G 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 43

左右 -26% 更低的延时
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Kingston 9965662-002.A01G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 34
读取速度，GB/s

14.9 8.6
写入速度，GB/s

9.6 8.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2506 2079

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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最新比较

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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Apacer Technology 78.CAGP7.AFW0C 8GB

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Kingston 9905471-076.A00LF 8GB

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Crucial Technology CT8G4SFS6266.M4FB 8GB

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Peak Electronics 256X64M-67E 2GB

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Avant Technology J644GU44J2320NF 32GB

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Samsung M378T5663QZ3-CF7 2GB

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Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

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Crucial Technology CT32G4SFD832A.C16FB 32GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Crucial Technology CT8G4DFS824A.M8FH 8GB

Crucial Technology CT8G4DFS824A.M8FH 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

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G Skill Intl F4-3300C16-16GTZ 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

A-DATA Technology AE4S240038G17-BHYA 8GB

A-DATA Technology AE4S240038G17-BHYA 8GB