Samsung DDR3 8GB 1600MHz 8GB vs Kingston 99U5713-001.A00G 4GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Kingston 99U5713-001.A00G 4GB

Kingston 99U5713-001.A00G 4GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

低于PassMark测试中的延时，ns

43 76

左右 43% 更低的延时
更快的读取速度，GB/s

14.9 14.2

测试中的平均数值
更快的写入速度，GB/s

9.6 6.0

测试中的平均数值

Kingston 99U5713-001.A00G 4GB

需要考虑的原因
Kingston 99U5713-001.A00G 4GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Kingston 99U5713-001.A00G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 76
读取速度，GB/s

14.9 14.2
写入速度，GB/s

9.6 6.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2506 1453

RAM Latency Calculator

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RAM 2

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Kingston KF3600C18D4/16GX 16GB

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Samsung M3 78T2953EZ3-CF7 1GB

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Corsair CMD64GX4M8A2400C14 8GB

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Apacer Technology 78.CAGP7.AZC0B 8GB

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A-DATA Technology DQVE1908 512MB

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G Skill Intl F4-3600C16-16GVKC 16GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Kingston 9905625-098.A00G 16GB

Kingston 9905625-098.A00G 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Ramaxel Technology RMSA3270MB76H8F2400 2GB

Ramaxel Technology RMSA3270MB76H8F2400 2GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

EVGA 8GX-D4-3000-MR 8GB

EVGA 8GX-D4-3000-MR 8GB

AMD R7416G2400U2S 16GB

AMD R7416G2400U2S 16GB

AMD R7416G2400U2S 16GB

AMD R7416G2400U2S 16GB