Samsung DDR3 8GB 1600MHz 8GB vs Kingston HX424C15PB/4 4GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Kingston HX424C15PB/4 4GB

Kingston HX424C15PB/4 4GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

低于PassMark测试中的延时，ns

43 68

左右 37% 更低的延时
更快的写入速度，GB/s

9.6 6.9

测试中的平均数值

Kingston HX424C15PB/4 4GB

需要考虑的原因
Kingston HX424C15PB/4 4GB

报告一个错误

更快的读取速度，GB/s

15.5 14.9

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Kingston HX424C15PB/4 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 68
读取速度，GB/s

14.9 15.5
写入速度，GB/s

9.6 6.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2506 1310

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Corsair CMK32GX4M2C3333C16 16GB

Corsair CMK32GX4M2C3333C16 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Kingston HX424C15PB/4 4GB

Kingston HX424C15PB/4 4GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Panram International Corporation PUD42133C158G2VS 8GB

Panram International Corporation PUD42133C158G2VS 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-4400C17-8GVK 8GB

G Skill Intl F4-4400C17-8GVK 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Corsair CM4X16GC3200C16K2 16GB

Corsair CM4X16GC3200C16K2 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Corsair CMD16GX4M4B3200C14 4GB

Corsair CMD16GX4M4B3200C14 4GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

G Skill Intl F4-3200C16-32GTRG 32GB

G Skill Intl F4-3200C16-32GTRG 32GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

G Skill Intl F4-4000C19-8GTZSW 8GB

G Skill Intl F4-4000C19-8GTZSW 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

G Skill Intl F4-3000C15-4GVR 4GB

G Skill Intl F4-3000C15-4GVR 4GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Crucial Technology BLS8G4D30BESBK.8FD 8GB

Crucial Technology BLS8G4D30BESBK.8FD 8GB

Kingston ACR16D3LS1KNG/8G 8GB

Kingston ACR16D3LS1KNG/8G 8GB

Gloway International (HK) STK4U2400D17081C 8GB

Gloway International (HK) STK4U2400D17081C 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Samsung M378A5244CB0-CVF 4GB

Samsung M378A5244CB0-CVF 4GB