Samsung DDR3 8GB 1600MHz 8GB vs Kingston LV32D4U2S8HD-8X 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Kingston LV32D4U2S8HD-8X 8GB

Kingston LV32D4U2S8HD-8X 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Kingston LV32D4U2S8HD-8X 8GB

需要考虑的原因
Kingston LV32D4U2S8HD-8X 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 43

左右 -13% 更低的延时
更快的读取速度，GB/s

19.7 14.9

测试中的平均数值
更快的写入速度，GB/s

13.0 9.6

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Kingston LV32D4U2S8HD-8X 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 38
读取速度，GB/s

14.9 19.7
写入速度，GB/s

9.6 13.0
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2506 3186

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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A-DATA Technology ADOVE1A0834E 1GB

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Crucial Technology CT16G4DFRA32A.C16FN 16GB

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Kingston KYXC0V-MIB 16GB

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Corsair CMD16GX3M2A1866C9 8GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Crucial Technology BLS4G4D240FSA.8FAR 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-2400C17-4GFX 4GB

G Skill Intl F4-2400C17-4GFX 4GB